Md. Abu Sayed Chowdhury

Md. Abu Sayed Chowdhury

Lecturer, Department of EEE, BRAC University
B.Sc. in EEE, Bangladesh University of Engineering and Technology (BUET)

I work on in-memory logic in memristor crossbars: storing each weight in two devices, then programming and reading them with ordinary 45 nm CMOS. I'm applying to PhD programs in this area for Fall 2027.

First-author paper at IEEE EDTM 2026 in Penang, Malaysia. B.Sc. CGPA 3.95/4.00, ranked 7th of 213. Currently pursuing an M.Sc. at BUET.

Md. Abu Sayed Chowdhury

Select a cell to change its state. The bars below the array count low-resistance cells in each column, which is the sum a bitline collects in one read.

Research interests

In-memory computing

Memristor/ReRAM crossbars and hybrid memristor-CMOS circuits that compute Boolean and arithmetic functions where the data is stored, cutting data movement.

Neuromorphic hardware

Spiking neural hardware, memristor synapses, and low-latency accelerators for edge AI.

Low-power peripheral circuits

The CMOS around the array: programming drivers, sense amplifiers, and low-power ADC/DAC readout, which often set a crossbar's real energy and area cost.

Publications

In-Memory Boolean Logic Computation in Binary Neural Network Inspired Memristor Crossbar Array

M. A. S. Chowdhury and O. Hassan. 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Penang, Malaysia, 2026, pp. 1–3. Poster presented on March 3, 2026.

© 2026 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses. The final published version is available at the DOI above.

Abstract

Neural network hardware is often implemented using memristor crossbars for their non-volatility, high density, and parallel computation capability. This work presents a methodology for implementing single-bit logic computation within such memory array structures, using a binary neural network approach to design the gates. Each binary weight is encoded with two memristor devices, and standard CMOS drivers handle programming and readout. Circuit-level SPICE simulations show NAND and XOR gates working, and cascading them gives a working full adder. Any Boolean function can be implemented with this methodology.

2 per synapseMemristors encoding each binary weight (differential 1R cell)
12 kΩ / 44 MΩLow and high resistance states of the modeled device
45 nm CMOSGPDK045 drivers and op-amp comparators in Cadence Virtuoso
NAND, XOR, adderVerified in circuit-level SPICE simulation with the VTEAM model

How a NAND gate works in the array

The weights for a 2-input NAND are [−1, −1] with a bias of +1. Each weight becomes a pair of memristors: −1 is (high, low) and +1 is (low, high). Switch the inputs to see which cells conduct and how the comparator decides the output.

RowInputWeightCol Y1Col Y2

low resistance (1)   high resistance (0). Logic 1 is +0.8 V, logic 0 is −0.8 V, and the bias input is always 1.

ABY
001
011
101
110
  • Memristors are programmed row by row with a half-bias scheme. A cell is set with 0 V on its wordline and 1.6 V on its bitline, and reset with the reverse. Unselected lines sit at 0.8 V, so half-selected cells see at most 0.8 V and keep their state.
  • In simulation, programming takes the first 12 ns. Computation starts at 20 ns, when the start signal rises to 1.1 V.
  • XOR needs a hidden layer of two neurons. The full adder cascades two XOR circuits for the sum and uses a structure like the XOR hidden-output crossbar for the carry.

Education

2025 to present

M.Sc. in Electrical and Electronic Engineering

Bangladesh University of Engineering and Technology (BUET)

2020 to 2025

B.Sc. in Electrical and Electronic Engineering

Bangladesh University of Engineering and Technology (BUET)

  • CGPA 3.95/4.00, class rank 7 of 213. Dean's List in every academic year.
  • Coursework: VLSI Circuits and Design, Analog Integrated Circuits, Semiconductor and Nano Devices, Introduction to Nanotechnology and Nanoelectronics, Processing and Fabrication Technology, Privacy Preserving Machine Learning, Spintronics.

Experience

Jan 2026 to present

Lecturer

Department of EEE, BSRM School of Engineering, BRAC University

  • Teaching Signals and Systems (EEE243), Numerical Techniques (EEE282), and Modeling and Simulation (EEE382).
Apr 2025 to Jan 2026

Adjunct Lecturer

Department of EEE, BUET

  • Ran lab sections for Electrical Circuits, Numerical Techniques, and Digital Signal Processing: pre-lab briefings, demonstrations, and help debugging experiments.
  • Helped update the lab curriculum and assessments. Gave students feedback and mentoring.
Jan 2024 to Mar 2025

Undergraduate thesis researcher

In-memory logic implementation in memristor-based crossbar arrays, BUET. Supervisor: Dr. Orchi Hassan

  • Developed an in-memory Boolean logic scheme modeled on binary neural networks; each binary weight is stored in two memristors in a crossbar array.
  • Designed the CMOS programming and readout circuits in Cadence Virtuoso (GPDK045). SPICE simulations showed NAND and XOR gates and a cascaded full adder.
  • Wrote and calibrated Verilog-A models based on VTEAM (threshold switching, nonlinear current–voltage behavior) for CMOS-memristor co-simulation.

Selected projects

16-bit carry skip adder: RTL to GDSII

SystemVerilog, Cadence Genus and Innovus, GPDK045. Dec 2024
1.24 ns critical path3.88 µW power136.8 µm² cell area100% functional coverage
  • Designed a block-based adder with propagate/generate logic and 2:1 multiplexers that skip ripple-carry blocks.
  • Wrote a layered SystemVerilog testbench with constrained-random stimulus. Coverage reached 100% on eight signed-arithmetic flag scenarios (Negative, Zero, Carry, Overflow).
  • Synthesized block sizes k = 2, 4, 8 and compared power, delay, and area, then picked k = 4.
  • Took the design through floorplanning, power mesh, placement, clock-tree synthesis, and routing in Innovus. The exported GDSII passed DRC/LVS with no setup or hold violations.
View on GitHub

Analog 8:1 multiplexer for biomedical signal acquisition

Cadence Virtuoso, GPDK045, CMOS transmission gates. Feb 2024
71.8 µW power3.5 MHz −3 dB bandwidth~850 Ω on-resistance92.66 ns switching delay1.576 pC charge injection
  • Designed for ECG and EEG acquisition: 24 CMOS transmission gates, eight input channels, three select lines.
  • Characterized transient, AC, DC, and noise behavior at a 3 V supply.
  • Sized the transistors against GPDK045 models to reduce crosstalk and signal distortion.
View on GitHub

FPGA-based intelligent home automation

Verilog, Intel Quartus, Altera Flex EPF10K70. Aug 2023
  • Wrote Verilog state machines that track people entering and leaving and switch the lights on when the room is occupied. The lights shut off automatically after 10 seconds.
  • Used two infrared sensors for occupancy and NTC thermistors for temperature; the fan turns on above 30°C.
  • Built four-speed PWM fan control with duty cycle set by occupancy: 1–3 people at 25%, 4–5 at 50%, 6–7 at 75%, 8–9 at 100%.
View on GitHub

Skills and awards

IC design and EDA

  • Cadence Virtuoso (schematic and layout)
  • Genus (synthesis)
  • Innovus (place-and-route, CTS)
  • GPDK045, DRC/LVS

Hardware description and modeling

  • Verilog, SystemVerilog, Verilog-A
  • VTEAM memristor modeling
  • RTL verification, functional coverage
  • FSMs, FPGA with Intel Quartus Prime

Simulation and programming

  • SPICE, LTspice, PSpice, Proteus
  • Python (NumPy, pandas, PyTorch)
  • MATLAB and Simulink
  • C/C++, ARM assembly

Embedded platforms

  • STM32
  • Arduino
  • ESP8266 and ESP32
  • Altera FPGAs
2024

First runner-up, VLSITHON 2024

University-wide VLSI design competition organized by Neural Semiconductor with BUET EEE Day 2024.

Five semesters

University Merit Scholarship, BUET

Awarded for academic excellence.

Contact

My CV has the full academic history and my referees. Email is the quickest way to reach me.